Making Oxidation Easier in Ultra High Vacuum
Tuesday, October 23, 2018 at 3:30pm to 4:30pm
66-110, 66-110 66-110
The Materials Science and Engineering Seminar Series presents Prof. Bharat Jalan from the University of Minnesota who will present his talk on "Making Oxidation Easier in Ultra High Vacuum".
The synthesis of metal oxide films containing elements of low oxidation potential has been challenging for ultra high vacuum (UHV) approaches. In his talk, Prof. Jalan will review these challenges in the context of molecular beam epitaxy (MBE) for the growth of defect-managed oxide thin films and heterostructures. He will present his group’s effort to address these challenges using a new radical-based hybrid MBE technique. Using Stannate (BaSnO3 and SrSnO3) as a model material system, he will also present a comprehensive growth, and electronic transport study of La-doped BaSnO3 and SrSnO3 yielding a world-record conductivity in optically transparent, doped-BaSnO3 films through defect management. The important role of defects such as dislocations, and non-stoichiometry on electronic transport in addition to discussing different scattering mechanisms that limit the room temperature electron mobility in La-doped BaSnO3 will be discussed. Finally, Prof. Jalan will explore pathways to enhance electron mobilities towards high room-temperature mobility oxide heterostructures using band structure engineering.