E-beam lithography enables advanced semiconductor chips; without e-beam lithography minimum feature sizes would be limited to approximately 200nm. In research environments, e-beam lithography allows direct write, maskless lithography enabling quick and relatively cheap design changes.

This talk introduces the basics of e-beam lithography and pattern transfer, including electron energy, material interaction, limits to resolution, e-beam resists, throughput, proximity effect correction, and characteristics of different e-beam lithography tools. 

Anyone with an interest in e-beam lithography from neophyte to experienced user should be able to gain something from this talk.