E-beam lithography enables advanced semiconductor chips; without e-beam lithography minimum features sizes would be limited to approximately 200 nm. In research environments e-beam lithography allows direct write, maskless lithography enabling quick and relatively cheap design changes.

This talk introduces the basics of e-beam lithography and pattern transfer, including electron energy, material interaction, limits to resolution, e-beam resists, throughput, proximity effect correction, and characteristics of different e-beam lithography tools.

Anyone interested in e-beam lithography, from neophyte to experienced users should be able to gain something from this talk.

Instructors: Mark Mondol, Assistant Director of Nano Structures Laboratory; Juan Ferrera, Research Scientist

Registration is now closed 

Registration deadline: January 17, 2024