About this Event
182 MEMORIAL DR (REAR), Cambridge, MA 02139
https://dmse.mit.edu/events/direct-integration-of-2d-materials-for-next-generation-electronic-devices/In this MSE Seminar, UC Berkeley’s Zakaria Al Balushi will present a scalable method for integrating two-dimensional semiconductors, such as molybdenum disulfide, into functional devices. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), are emerging as key materials for next-generation electronics, addressing challenges in the miniaturization of silicon-based technologies. Despite progress in scaling-up 2D materials, integrating them into functional devices remains challenging, particularly in the context of three-dimensional integration. This talk will present a scalable method for growing high-quality mono- to few-layer MoS2 on large wafers using a spin-on precursor, molybdenum ethyl xanthate.